Semiconductor light emitting element and method for fabricating the same

ABSTRACT

Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. §119(a) toJapanese Patent Application JP 2004-189892, filed Jun. 28, 2004 andJapanese Patent Application JP 2005-188335, filed Jun. 28, 2005, theentire content of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Technical Field to Which the Invention Pertains

The present invention relates to a light emitting element using asemiconductor and to a method for fabricating the same.

2. Prior Art

The use of a nitride-based compound semiconductor represented by AlInGaNhas enabled the commercialization of light emitting elements whichoutput light at the ultraviolet, blue, and green wavelengths from whichit has heretofore been difficult to obtain a sufficient emissionintensity, such as a light emitting diode (LED) and a semiconductorlaser, so that research and development thereof has been conductedvigorously. Among light-emitting elements, an LED is easier to fabricateand control than a semiconductor laser and longer in lifespan than afluorescent lamp so that the LED, particularly using a nitride-basedcompound semiconductor, is considered to be promising as a light sourcefor illumination.

FIG. 35 is a perspective view showing a conventional nitride-basedcompound semiconductor LED. The conventional LED has a structure inwhich an n-type GaN layer 1002, an InGaN active layer 1003, and a p-typeGaN layer 1004 are formed successively through crystal growth on asapphire substrate 1001. Each of the InGaN active layer 1003 and thep-type GaN layer 1004 has been removed partly by etching so that then-type GaN layer 1002 is exposed. An n-side electrode 1006 is formed onthe exposed portion of the n-type GaN layer 1002. A p-side bondingelectrode 1007 is provided on the p-type GaN layer 1004.

The following is the operation of the LED.

First, holes injected from the p-side bonding electrode 1007 arediffused laterally in a p-side transparent electrode 1005 to be injectedfrom the p-type GaN layer 1004 into the InGaN active layer 1003.

On the other hand, electrons injected from the n-side electrode 1006 arefurther injected into the InGaN active layer 1003 through the n-type GaNlayer 1002. The recombination of the holes and the electrons in theInGaN active layer 1003 causes light emission. The light is emitted tothe outside of the LED through the p-side transparent electrode 1005.

However, it cannot be said that such a conventional structure hassufficiently high light extraction efficiency. The light extractionefficiency is the ratio of light generated in the active layer andemitted from the LED into an air to all the light generated in theactive layer. The cause of the low light extraction efficiency of theconventional LED is the refractive index of a semiconductor which ishigher than that of the air so that the light from the active layer istotally reflected by the interface between the semiconductor and the airand confined to the inside of the LED. For example, the refractive indexof GaN is about 2.45 at a wavelength of 480 nm so that a critical angleof refraction at which total reflection occurs is as small as about 23degrees. That is, the light emitted from the active layer at an anglelarger than the critical refraction angle in terms of a normal to theinterface between the semiconductor and the air is totally reflected bythe interface between the semiconductor and the air so that the lightemitted from the active layer and extractable to the outside of the LEDaccounts for only about 4% of all the light emitted from the activelayer. Accordingly, the problem is encountered that external quantumefficiency (the ratio of light that can be extracted from the LED tocurrents supplied to the LED) is low and power conversion efficiency(the ratio of a light output that can be produced to all the suppliedpower) is lower than that of a fluorescent lamp.

As a solution to the problem, a technology which forms a photoniccrystal at the surface of the LED has been proposed, as disclosed inJapanese Laid-Open Patent Publication No. 2000-196152.

FIG. 36 is a perspective view showing a conventional LED having an uppersurface formed with a photonic crystal. As shown in the drawing,two-dimensional periodic projections/depressions are formed in thep-type GaN layer 1004 according to the conventional embodiment. In thestructure, even light emitted from the active layer at an angle largerthan the critical refraction angle in terms of the normal to theinterface between the semiconductor and the air can have the directionof emission at an angle smaller than the critical refraction angle dueto diffraction by the periodic projection/depressions. This increasesthe ratio of light emitted to the outside of the LED without beingtotally reflected and improves the light extraction efficiency. In thepresent specification, the wording “two-dimensional periodic” indicatesthat a structure is formed to have given spacings (a given period) alonga first direction in a plane, while it is also formed to have givenspacings (a given period) along a second direction crossing the firstdirection.

SUMMARY OF THE INVENTION

However, there are cases where the following problems occur whenprojections/depressions are formed in the surface of the LED close tothe active layer, such as in the p-type GaN layer.

Since the p-type GaN layer 1004 has a high resistivity, the filmthickness thereof is preferably as thin as about 0.2 μm in terms ofreducing the series resistance of the LED and achieving high-efficiencylight emission. To form the projections/depressions in the upper surfaceof the p-type GaN layer 1004, however, it is necessary to increase thefilm thickness of the p-type GaN layer 1004. As a result, there arecases where the series resistance of a conventional LED as shown in FIG.35 increases and the power conversion efficiency thereof lowers. Inaddition, dry etching for forming the projections/depressions in thep-type GaN layer 1004 causes a crystal defect in the surface of thep-type GaN layer 1004. Since such a crystal defect functions as anelectron donor, an electron density in the surface of the n-type GaNlayer 1002 increases and the contact resistance thereof lowers. In thep-type GaN layer 1004, however, the crystal defect resulting from anetching damage compensates for the holes so that the formation of anohmic electrode becomes difficult. This leads to the problem that thecontact resistivity increases and the power conversion efficiencylowers. Since the projections/depressions are close to the active layer,etching-induced damage occurs in the active layer during the formationof the projections/depressions. Consequently, the problems of areduction in internal quantum efficiency (the ratio of electron-holepairs that are recombined in the active layer and converted to photonsto all the electron-hole pairs recombined in the active layer) in theactive layer and a reduction in the light emission efficiency of the LEDare also likely to occur.

The surface of the LED in which a two-dimensional photonic crystal canconceivably be formed is the main or back surface thereof. In this case,the back surface of the substrate and the interface between thesubstrate and the semiconductor can be considered as two locations ateither of which the photonic crystal is to be formed. In either case,however, the following problem is encountered when the photonic crystalis formed by using the conventional technology. In the case of formingthe photonic crystal at the back surface of the substrate, totalreflection occurs at the interface between the semiconductor and thesubstrate so that the effect of improving the light extractionefficiency achieved by the photonic crystal formed in the back surfaceof the substrate is lower than when the photonic crystal is formed inthe semiconductor. In the case of forming the photonic crystal at theinterface between the semiconductor and the substrate, on the otherhand, the efficiency of diffraction by the periodicprojections/depressions lowers due to a small refractive indexdifference between the semiconductor and the substrate so that theeffect of improving the light extraction efficiency is lower than whenthe photonic crystal is formed at the uppermost surface of the LED.

It is therefore an object of the present invention to provide asemiconductor light emitting element with a light extraction efficiencyhigher than achieved conventionally.

A first semiconductor light emitting element according to the presentinvention is a semiconductor light emitting element comprising: multiplesemiconductor layers formed on a substrate and then delaminatedtherefrom, wherein a two-dimensional periodic structure is formed in afirst principal surface of the multiple semiconductor layers which wasin contact with the substrate.

The arrangement reduces the possibility of damage to the back surface ofthe multiple semiconductor layers during the fabrication of the elementand thereby improves power conversion efficiency to a level higher thanachieved conventionally.

The substrate may be made appropriately of sapphire or the like but ispreferably made of silicon. A silicon substrate is more excellent inheat conduction than a sapphire substrate. This makes it possible tocause uniform heat generation throughout the entire two-dimensionalperiodic structure at the time of delamination (e.g., heat of reactionwhen the silicon substrate is removed by wet etching).

A second semiconductor light emitting element according to the presentinvention is a semiconductor light emitting element comprising: asubstrate having a two-dimensional periodic structure in a firstprincipal surface thereof; and multiple semiconductor layers formed overthe first principal surface of the substrate and including an activelayer for generating light, wherein the substrate is made of silicon.

The arrangement allows the improvement of the diffraction efficiencywithout removing the substrate and thereby allows easier fabricationthan in the case where the substrate is removed.

The present inventors have found that the use of silicon for thesubstrate is appropriate by the following procedure.

During crystal growth, a silicon substrate is exposed to a hightemperature and residual oxygen in a crystal growth furnace forms anextremely thin SiO₂ film on the surface of the silicon substrate (thesurface of the two-dimensional periodic structure). In contrast to therefractive index of silicon which is about 3.3, the refractive index ofSiO₂ is about 1.4. Since the refractive index of a light emittingsemiconductor layer is typically 2.4 to 3.3, the SiO₂ film increases achange in the refractive index of the two-dimensional periodicstructure. Because the diffraction efficiency is higher as therefractive index change is larger, the light emission efficiency canfurther be increased.

A method for fabricating a semiconductor light emitting elementaccording to the present invention comprises the steps of: (a) forming afirst two-dimensional periodic structure in a principal surface of asubstrate; and (b) forming multiple semiconductor layers over the firsttwo-dimensional periodic structure.

The method allows the formation of a structure such as a two-dimensionalperiodic structure without damaging the back surface of the multiplesemiconductor layers and thereby allows the fabrication of asemiconductor light emitting element with an improved light extractionefficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a semiconductor light emittingelement according to a first embodiment of the present invention;

FIG. 2 is a view showing the result of theoretically calculating theincident-angle dependence of an amount of light emitted to the outsideof the semiconductor light emitting element;

FIG. 3A is a view showing a structure of an LED in a real space andFIGS. 3B and 3C are views each showing a structure of the light emittingelement in a wave-number space;

FIGS. 4A and 4B are views each showing a structure of the wave-numberspace when a two-dimensional periodic structure with a 0.1-μm period hasbeen formed in the surface of an n-type GaN layer;

FIG. 5 is a view showing a refractive index at each portion of asemiconductor layer having a surface formed with a periodic structure;

FIGS. 6A to 6C are views each showing a structure of the wave-numberspace when a two-dimensional periodic structure with a 0.2-μm period hasbeen formed on the surface of the n-type GaN layer;

FIG. 7 is a view showing a structure of the wave-number space when atwo-dimensional periodic structure with a 0.4-μm period has been formedin the surface of the n-type GaN layer;

FIG. 8 is a view for illustrating a solid angle used to calculate lightextraction efficiency;

FIG. 9 is a view showing a value obtained by normalizing lightextraction efficiency obtained by using numerical calculation to lightextraction efficiency when the surface of the n-type GaN layer is flat;

FIGS. 10A and 10B are plan views each showing the arrangement of atwo-dimensional periodic structure formed in the surface of the n-typeGaN layer;

FIGS. 11A to 11F are perspective views illustrating a method forfabricating the semiconductor light emitting element according to thefirst embodiment;

FIG. 12A is a view showing the respective current-voltagecharacteristics of a conventional semiconductor light emitting elementand the semiconductor light emitting element according to the firstembodiment and FIG. 12B is a view showing the respective current-lightoutput characteristics of the conventional semiconductor light emittingelement and the semiconductor light emitting element according to thefirst embodiment;

FIGS. 13A and 13B are perspective views each showing a variation of thesemiconductor light emitting element according to the first embodiment;

FIG. 14 is a perspective view showing a variation of the semiconductorlight emitting element according to the first embodiment;

FIGS. 15A and 15B are perspective views each showing a variation of thesemiconductor light emitting element according to the first embodiment;

FIGS. 16A and 16B are perspective views each showing a variation of thesemiconductor light emitting element according to the first embodiment;

FIG. 17 is a view showing the result of theoretically calculating thedependence of light extraction efficiency on the tilt angle of adepression;

FIGS. 18A to 18F are perspective views illustrating a second method forfabricating the semiconductor light emitting element shown in FIG. 1according to the first embodiment;

FIG. 19A is a perspective view showing a semiconductor light emittingelement according to a second embodiment of the present invention andFIG. 19B is a plan view when the semiconductor light emitting elementaccording to the second embodiment is viewed from above;

FIG. 20A is a view showing the result of theoretically calculating thetransmittance T of light incident on the surface of an n-type GaN layerwhen the surface (back surface) of the n-type GaN layer is formed withprojections configured as hexagonal pyramids and FIG. 20B is a viewshowing the relationship between the period of a two-dimensionalperiodic structure and light extraction efficiency;

FIGS. 21A to 21F are perspective views illustrating a method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIGS. 22A to 22C are views illustrating a variation of the method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIGS. 23A and 23B are views illustrating a variation of the method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIGS. 24A and 24B are views illustrating the variation of the method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIGS. 25A and 25B are views illustrating a variation of the method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIGS. 26A to 26C are views illustrating a variation of the method forfabricating the semiconductor light emitting element according to thesecond embodiment;

FIG. 27 is a perspective view showing a semiconductor light emittingdevice according to a third embodiment of the present invention;

FIG. 28A is a view showing the result of theoretically calculating thetransmittance of light when a semiconductor light emitting element ismolded with a resin and FIG. 28B is a view showing the result oftheoretically calculating the dependence of light extraction efficiencyon the period of a two-dimensional periodic structure in thesemiconductor light emitting element according to the third embodiment;

FIGS. 29A to 29D are perspective views illustrating a method forfabricating the semiconductor light emitting element according to thethird embodiment;

FIG. 30 is a cross-sectional view showing a part of a semiconductorlight emitting element according to a fourth embodiment of the presentinvention;

FIGS. 31A to 31E are cross-sectional views illustrating a method forfabricating the semiconductor light emitting element according to thefourth embodiment;

FIGS. 32A to 32E are perspective views illustrating a method forfabricating a semiconductor light emitting element according to a fifthembodiment of the present invention;

FIGS. 33A to 33G are perspective views illustrating a method forfabricating a semiconductor light emitting element according to a sixthembodiment of the present invention;

FIG. 34 is a perspective view showing a semiconductor light emittingelement according to a seventh embodiment of the present invention;

FIG. 35 is a perspective view showing a conventional semiconductor lightemitting element; and

FIG. 36 is a perspective view showing a conventional semiconductor lightemitting element having an upper surface formed with a photonic crystal.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be described more specifically in accordancewith the individual embodiments thereof. In the present specification,the surface of a semiconductor layer formed by epitaxial growth which isopposite to the principal surface thereof in the direction of crystalgrowth will be termed a back surface.

Embodiment 1 —Structure of Light Emitting Element—

FIG. 1 is a perspective view showing a semiconductor light emittingelement according to a first embodiment of the present invention. Asshown in the drawing, the semiconductor light emitting element accordingto the present embodiment comprises: a p-type GaN layer (firstsemiconductor layer) 3 formed by epitaxial growth and having a thicknessof 200 nm; a high-reflection p electrode (first electrode) 2 formed onthe crystal growing surface (principal surface) of the p-type GaN layer3, made of platinum (Pt) and gold (Au) which are stacked in layers, andhaving a thickness of 1 μm; an Au plating layer 1 formed on the lowersurface of the high-reflection p electrode 2 and having a thickness of10 μm; a non-doped InGaN active layer 4 formed on the back surface ofthe p-type GaN layer 3 and having a thickness of 3 nm; an n-type GaNlayer (second semiconductor layer) 5 formed on the back surface of thenon-doped InGaN active layer 4, having a back surface formed with aprojecting two-dimensional periodic structure 6, and having a thicknessof 4 μm; and an n electrode (second electrode) 7 formed on the backsurface of the n-type GaN layer 5, made of titanium (Ti) and Al whichare stacked in layers, and having a thickness of 1 μm. The lower surfaceused herein indicates the surface positioned in the, lower part ofFIG. 1. In the example shown in FIG. 1, the high-reflection p electrode2 is provided on the entire principal surface of the p-type GaN layer 3and the n electrode 7 is provided on a part of the back surface of then-type GaN layer 5. The wording “non-doped” indicates that intentionaldoping has not been performed with respect to a layer of concern.

The semiconductor light emitting element according to the presentembodiment functions as an LED from which light is extracted through theback surface of the n-type GaN layer 5. The PL peak wavelength of thenon-doped InGaN active layer 4 is 405 nm. As will be described layer,MOCVD (Metal-Organic Chemical Vapor Deposition), MBE (Molecular BeamEpitaxy), or the like will be used as a method for the crystal growth ofa nitride-based compound semiconductor composing the semiconductorlight-emitting element.

The period of the two-dimensional periodic structure 6 formed in theback surface of the n-type GaN layer 5, i.e., the spacing between therespective centers of adjacent projections in a two-dimensional plane is0.4 μm and the height of each of the projections is 150 nm.

—Description of Diffraction at Surface of n-Type GaN Layer—

A description will be given next to diffraction at the surface (backsurface) of the n-type GaN layer of the semiconductor light emittingelement according to the present embodiment based on the result ofsimulation. FIG. 2 is a view showing the result of theoreticallycalculating the incident-angle dependence of the transmittance of lightemitted from the non-doped InGaN active layer and incident on the backsurface (the upper surface in the drawing) of the n-type GaN layer,i.e., an amount of light emitted to the outside of the LED. For thetheoretical calculation, numerical analysis in accordance with a FDTD(Finite Difference Time Domain) method was used. It is assumed that theincident angle when the light is incident perpendicularly to the backsurface of the n-type GaN layer is zero degree.

As shown in FIG. 2, when the surface of the n-type GaN layer is smoothand flat, the transmittance is constant when the incident angle is inthe range of zero degree to a total reflection critical angle θc (sincethe refractive index of GaN is about 2.5, θc=sIn−1 (1/2.5)=about 23degrees is satisfied) and the value thereof is about 90%. The cause ofthe reflection of 10% of generated light and the returning of thereflected light to the inside of the LED is Fresnel reflection resultingfrom the refractive index difference between GaN and the air. The reasonfor the transmittance which becomes approximately zero when the incidentangle exceeds the total reflection critical angle is that totalreflection occurs at the interface between GaN and the air. The cause ofthe occurrence of the total reflection will be described with referenceto FIG. 3.

FIG. 3A is a view showing a structure of the LED in an actual space (1)and FIGS. 3B and 3C are views each showing a structure of the lightemitting element in a wave-number space. FIG. 3B shows the case wherethe incident angle of light is small and FIG. 3C shows the case wherethe incident angle of light is large. The semi-circle in each of FIGS.3B and 3C is an equi-frequency surface, which indicates the magnitude(Wave Number k=2πn/λ where n is a refractive index and λ is a wavelengthin vacuum) of a wave vector to be satisfied by an incident wave, areflected wave, and a transmitted wave in the LED and in the air. Thesemi-circle indicates the conservation law of photon energy (hω)2π, h isthe Planck's constant). This is because the relationship given by k=ωn/cis established (c is a velocity of light in vacuum). When the structurein the actual space has translational symmetry relative to a horizontaldirection as in the case (1) shown in FIG. 3A, there is the conservationlaw of a wave number component in the horizontal direction which shouldbe observed by each of the incident wave, the reflected wave, and thetransmitted wave (which is related to the phase continuity of anelectromagnetic wave). The incident angle and an emission angle aredetermined to satisfy the foregoing two laws.

When the incident angle of light is small as shown in FIG. 3B, the lightcan be emitted into the air because the emission angle which satisfiesthe foregoing two laws exists. When the incident angle of light is largeas shown in FIG. 3C, however, there is no emission angle which satisfiesthe wave number component in the horizontal direction so that the lightcannot be emitted into the air. In this case, the transmittance Tsatisfies T=0 so that, when there is no absorption at the interfacebetween the LED and the air, the reflectivity R satisfies R=1 since theconservation law of optical energy, which is T+R=1, should be satisfied.Consequently, light is totally reflected by the interface between theLED and the air. Even if a structure which reduces Fresnel reflection,such as a no-reflection film, is introduced into the interface betweenthe LED and the air, R=1 is inevitably satisfied under a condition whichsatisfies the transmittance T=0 so that total reflection is inevitable.

FIGS. 4A and 4B are views showing a structure of the wave-number spacewhen a two-dimensional periodic structure with a 0.1-μm period is formedin the surface of the n-type GaN. The periodic structure formed in thesurface causes diffraction so that it is necessary for a wave numberk_(1//) in the horizontal direction of the incident wave and a wavenumber k_(k/)/, in the horizontal direction of the transmitted wave tosatisfy the following condition based on Diffraction Vector G=2π/Λ (Λ isa period):

k _(2//) =k _(1//) ±mG (m is an order of diffraction and m=0, ±1, ±2, .. . ).

The transmitted wave occurs when the wave number k_(2//) which satisfiesthe foregoing expression and the condition for the equi-frequencysurface mentioned above exists.

As shown in FIG. 4A, when the period of the structure is 0.1 μm and theincident angle is zero degree, the magnitude of the diffraction vectoris excessively large so that, if it is assumed that the transmitted waveis diffracted, total reflection occurs since k_(2//) is larger than theequi-frequency surface in the air. In this case, therefore, nodiffraction occurs. When the incident angle is 70 degrees at which a0-order transmitted wave is totally reflected, as shown in FIG. 4B, thecondition for total reflection is satisfied even if the light isdiffracted. In the case with the period, therefore, total reflectionoccurs at an incident angle not less than the total reflection criticalangle in the same manner as when the surface is flat.

FIG. 5 is a view showing a refractive index at each portion of asemiconductor layer having a surface formed with the periodic structure.As shown in FIG. 5, when the period of the periodic structure is smallerthan the wavelength of light, the effective refractive index of thetwo-dimensional periodic structure in the surface of the semiconductorlayer lowers due to the projections/depressions thereof so that the two-dimensional periodic structure functions as a layer having a refractiveindex in the middle of the refractivities of the air and the LED. Inthis case, the refractive index difference between the air and the LEDis reduced so that it becomes possible to suppress Fresnel reflectionwhich occurs when the incident angle is smaller than the totalreflection critical angle and improve the transmittance of light whenthe incident angle is smaller than the total reflection critical angle,as shown in FIG. 2.

A description will be given next to the case where the surface (backsurface) of the n-type GaN layer has a two-dimensional periodicstructure with a 0.2-μm period. FIGS. 6A to 6C are views showing astructure of the wave-number space when the two-dimensional periodicstructure with a 0.2-μm period has been formed in the surface of then-type GaN layer.

Under this condition, total reflection occurs since k_(2//) when lightis diffracted is larger than the equi-frequency surface in the airprovided that the incident angle of the light is zero degree so that nodiffraction occurs. In this case, a 0-order transmitted wave passesthrough the interface between the n-type GaN layer and the air.

By contrast, when the surface is flat and the incident angle at whichtotal reflection occurs is 30 degrees or 70 degrees, k_(2//) is smallerthan the equi-frequency surface in the air so that the diffractedtransmitted wave (the order of diffraction: −1) is allowed to passthrough the interface, as shown in FIGS. 6B and 6C. As a result, thetransmittance does not become zero even at an angle not less than thetotal reflection critical angle, as shown in FIG. 2. Since thediffraction efficiency also contributes to an actual transmittance, thetransmittance presents a complicated curve. In this case, thediffraction vector is relatively large so that diffraction of an ordernot lower than second does not contribute to transmission.

FIG. 7 is a view showing a structure of the wave-number space when atwo-dimensional periodic structure with a 0.4-μm period has been formedin the surface of the n-type GaN layer. Since the diffraction vector isrelatively small with this period, first-order diffraction is related totransmission even when the incident angle of light is zero degree asshown in FIG. 7A. When the incident angle is 35 degrees as shown in FIG.7B, first- and second-order diffraction contributes to transmission,while second- and third-order diffraction contributes to transmissionwhen the incident angle is 70 degrees as shown in FIG. 7C. As a result,the transmittance becomes relatively high even at an angle not less thanthe total reflection critical angle, as shown in FIG. 2.

Thus, as the period of the structure formed in the surface of the n-typeGaN layer becomes larger, higher-order diffraction is involved and thebehavior of light becomes more complicated.

Based on the result of the foregoing, analysis, it is assumed that, inthe semiconductor light emitting element according to the presentembodiment, 0.5λ/N<Λ<20λ/N is satisfied when the refractive index of thesemiconductor layer formed with the two-dimensional periodic structureis N and the period of the two-dimensional periodic structure is A. If0.5λ/N>Λ is satisfied, an angle change caused by diffraction is largeand the diffracted light is at an angle over the total reflectioncritical angle so that the diffracted light is not emitted to theoutside of the semiconductor light emitting element. In this case,diffraction with a two-dimensional period cannot improve the lightextraction efficiency. If Λ>20λ/N is satisfied, the period becomesextremely larger than the wavelength of light emitted from the activelayer so that the effect of diffraction is hardly expected. In view ofthe foregoing, the condition defined by 0.5λ/N<Λ<20λ/N is preferablysatisfied to validate the effect of the two-dimensional periodicstructure.

FIG. 8 is a view for illustrating a solid angle used to calculate lightextraction efficiency. As shown in the drawing, it is necessary toobtain actual light extraction efficiency 11 by integrating atheoretical reflectivity with an incident angle in consideration of theeffect of a solid angle on a transmittance T (θ) at each incident angle.Specifically, η can be derived from the following numerical expression:

η=∫2πT(θ)·θ·dθ.

FIG. 9 is a view showing a value obtained by normalizing lightextraction efficiency obtained from the foregoing numerical expressionto light extraction efficiency when the surface of the n-type GaN layeris flat. As the parameters of calculation, the period A and the height hof each of the projections/depressions are considered. According to theresult, the light extraction efficiency is maximum when the height ofeach of the projections in the surface of the GaN layer is 150 nm. Thisis because, when the height h of each of the projections/depressions isλ/{2(n₂−n₁)} (where λ is a light emission wavelength in an air or invacuum, n₁ is the refractive index of the air, and n₂ is the refractiveindex of a semiconductor), the phase of the light component of lightpassing through the projections/depressions which passes through each ofthe projections and the phase of the light component thereof whichpasses through each of the depressions intensify each other throughinterference so that the diffraction effect achieved by theprojections/depression becomes maximum. In this case, h=about 130 nm issatisfied, which nearly coincides with the result of numericalcalculation in accordance with the FDTD method. Thus, in thesemiconductor light emitting element according to the presentembodiment, h is most preferably in the vicinity of an integral multipleof λ/{2(n₂−n₁)}. It is assumed herein that h approximates toλ/{2(n₂−n₁)} by considering general performance variations resultingfrom the fabrication process.

It can be seen from FIG. 9 that, when the height h of each of theprojections/depression is 150 nm, the light extraction efficiency isimproved by 2.6 times at the maximum compared with the case where thesurface of the n-type GaN layer is flat provided that period Λ is 0.4 to0.5 μm. To circumvent total reflection, it is necessary to usehigher-order diffraction as the period Λ is longer. However, since thediffraction efficiency becomes lower as the order of diffraction ishigher, the light extraction efficiency becomes lower as the period islonger when the period Λ is in the range not less than 0.4 μm. Forexample, when the period of the structure shown in FIG. 2 is 2.0 μm, thetransmittance of light at an incident angle not smaller than the totalreflection critical angle is lower than that with a 0.4-μm period.

FIGS. 10A and 10B are plan views showing the arrangement of thetwo-dimensional periodic structure formed in the surface of the n-typeGaN layer. As shown in the drawings, the two-dimensional periodicstructure formed in the semiconductor light emitting element accordingto the present embodiment may be either a tetragonal lattice or atriangular lattice.

—Method for Fabricating Light Emitting Element—

FIGS. 11A to 11F are perspective views illustrating a method forfabricating the semiconductor light emitting element according to thepresent embodiment which is shown in FIG. 1.

First, as shown in FIG. 11A, the sapphire substrate 8 is prepared andthe AlGaN layer 9 with a thickness of 1 μm is formed through crystalgrowth by MOCVD (Metal Organic Chemical Vapor Deposition) on theprincipal surface of the sapphire substrate 8. If the thickness of theAlGaN layer 9 is 1 μm, crystal defects occurring therein are reduced.The composition of Al in the AlGaN layer 9 is assumed herein to be 100%,though the AlGaN layer 9 may have any Al composition provided that it istransparent to the wavelength of light used for a laser lift-off processperformed later.

Next, as shown in FIG. 11B, the depressed-type two-dimensional periodicstructure 10 is formed in the principal surface of the AlGaN layerthrough patterning. In the present step, a resist for an etching mask ispatterned by using electron beam exposure, a stepper, and the like.Then, the etching of the AlGaN layer can be performed by using a dryetching technology such as RIE (Reactive Ion Etching) or ion milling, byphotoelectrochemical etching performed under the irradiation ofultraviolet light, or by using a wet etching technology such as etchingusing a heated acid/alkali solution for the etching of the nitride-basedcompound semiconductor. In this example, the two-dimensional periodicstructure 10 is formed by electron beam exposure and RIE. It is assumedthat the period of the two-dimensional periodic structure 10 is 0.4 μmand the depth of each of the depressions is 150 nm. Although theconfiguration of the two-dimensional periodic structure 10 is notparticularly limited, the depression has a cylindrical hole in theexample shown in FIG. 11B.

Next, as shown in FIG. 11C, an n-type GaN layer 11 (corresponding to then-type GaN layer 5 in FIG. 1), a non-doped InGaN active layer 12(corresponding to the non-doped InGaN active layer 4), and a p-type GaNlayer 13 (corresponding to the p-type GaN layer 3) are formed in thisorder by MOCVD over the principal surface of the AlGaN layer 9 formedwith the two-dimensional periodic structure 10. It is assumed hereinthat the respective thicknesses of the n-type GaN layer 11, thenon-doped InGaN active layer 12, and the p-type GaN layer 13 are 4 μm, 3nm, and 200 nm. In the present step, the crystal growth of the n-typeGaN layer 11 is performed by setting conditions for the growth such thatthe two-dimensional periodic structure 10 is filled therewith.

Thereafter, the Pt/Au high-reflection p electrode 2 (composed of amultilayer film of Pt and Au) is formed on the principal surface of thep-type GaN layer 13 by, e.g., electron beam vapor deposition. Further,the Au plating layer 15 with a thickness of about 50 μm is formed byusing the Au layer of the high-reflection p electrode 2 as an underlyingelectrode.

Subsequently, as shown in FIG. 11D, a KrF excimer laser (at a wavelengthof 248 nm) is applied to the back surface of the sapphire substrate 8for its irradiation in such a manner as to scan the surface of a wafer.The laser beam used for irradiation is not absorbed by the sapphiresubstrate 8 and the AlGaN layer 9 but is absorbed only by the n-type GaNlayer 11 so that GaN is unbonded by local heat generation in thevicinity of the interface with the AlGaN layer 9. As a result, itbecomes possible to separate the AlGaN layer 9 and the sapphiresubstrate 8 from the n-type GaN layer 11 and a device structure made ofa GaN-based semiconductor is obtainable. The light source used hereinmay be any light source provided that it supplies light at a wavelengthabsorbed by the GaN layer and transparent to the AlGaN layer and thesapphire layer. It is also possible to use a third harmonic (at awavelength of 355 nm) of a YAG laser or an emission line of a mercurylamp (at a wavelength of 365 nm).

Next, as shown in FIG. 11E, the sapphire substrate 8 and the AlGaN layer9 are removed from the state shown in FIG. 11D. As a result, theprojecting-type two-dimensional periodic structure 6 is formed by selfalignment in the back surface of the n-type GaN layer. Since such asemiconductor multilayer film (i.e., a multilayer film composed of then-type GaN layer 11, the non-doped InGaN active layer 12, and the p-typeGaN layer 13) resulting from the removal of the substrate is anextremely thin film with a thickness of about 5 μm, it has beendifficult to form an extremely fine structure such as a photonic crystalby using a conventional photolithographic technology. However, themethod according to the present invention allows easy transfer of theextremely fine structure to the surface (back surface) of thesemiconductor multilayer film by merely depositing the semiconductormultilayer film over the depressed two-dimensional periodic structure 10formed preliminarily in the substrate and removing the substratethereafter.

Then, as shown in FIG. 11F, the Ti/Al n electrode 7 having a thicknessof 1 μm is formed on the region of the back surface of the n-type GaNlayer 11 in which the two-dimensional periodic structure 6 is not formedby vapor deposition and lithography or the like, whereby thesemiconductor light emitting element according to the present embodimentis fabricated.

—Effects of Semiconductor Light Emitting Element and Fabrication MethodTherefor—

FIGS. 12 show the characteristics of the semiconductor light emittingelement thus obtained, of which FIG. 12A is a view showing therespective current-voltage characteristics of the semiconductor lightemitting elements according to the conventional and present embodimentsand FIG. 12B is a view showing the respective current-light outputcharacteristics of the semiconductor light emitting elements accordingto the conventional and present embodiments. In the drawings, the graphsof the dotted lines represent the characteristics of the semiconductorelement having the conventional structure in which the surface of theLED is flat and from which the sapphire substrate has not been removedand the graphs of the solid lines represent the characteristics of thesemiconductor light emitting element according to the presentembodiment.

From the current-voltage characteristics shown in FIG. 12A, it will beunderstood that the semiconductor light emitting elements according tothe present and conventional embodiments have substantially equalcurrent-voltage characteristics including substantially the same risingvoltages. From the comparison with the conventional embodiment in whichthe projections/depressions are not formed in the surface of the n-typeGaN layer, it will be understood that, in the semiconductor lightemitting element fabricated by the method according to the presentembodiment, the semiconductor multilayer film receives noprocessing-induced damage resulting from the formation of thetwo-dimensional periodic structure. Although the sapphire substrate 8can be removed by polishing and the AlGaN layer 9 can be removed byetching in the substrate separating step shown in FIGS. 11D and 11E, amethod which uses a laser is more preferable because it is completed ina shorter period of time.

From the current-light output characteristic shown in FIG. 12B, on theother hand, it will be understood that, under the same current, thelight output of the semiconductor light emitting element according tothe present embodiment has increased to a value substantially five timesthe light output of the semiconductor light emitting element accordingto the conventional embodiment. The value is about double thetheoretically calculated value shown in FIG. 2. This is because, due tothe two-dimensional periodic structure in the surface of the LED, theefficiency of light extraction from the surface has increased to about2.5 times the efficiency of light extraction from the flat surface ofthe conventional LED and, in addition, a high-reflection p electrode 14formed on the lower surface of the LED (the back surface of the p-typeGaN layer 13) allows the light emitted from the non-doped InGaN activelayer 12 toward the high-reflection p electrode 14 to be reflectedefficiently to the two-dimensional periodic structure 6.

From FIG. 12B, it will also be understood that the light output of theconventional structure is saturated under a large current, while thelight output of the element according to the present embodiment is notsaturated even under a large current over 100 mA. This is because heatgenerated in the active layer of the conventional structure isdissipated through the n-type semiconductor layer as thick as severalmicrometers and through the sapphire substrate with a poor heatconduction property. This is also because the light emitting elementaccording to the present embodiment has an excellent heat dissipationproperty because heat from the active layer can be dissipated from thep-type semiconductor as thin as submicron meters through the Au platinglayer with a high thermal conductivity.

Thus, even under a large current, the Au plating layer 15 allows theretention of the improved light extraction efficiency achieved by thetwo-dimensional periodic structure 6.

FIG. 13A and 13B, FIG. 14, and FIGS. 15A and 15B are perspective viewsshowing variations of the semiconductor light emitting element accordingto the present embodiment. FIGS. 16A and 16B are perspective views eachshowing a variation of the method for fabricating the semiconductorlight emitting element according to the present embodiment.

Although the projecting-type two-dimensional periodic structure 6 hasbeen formed by using the depressed-type two-dimensional periodicstructure 10 formed in the surface of the AlGaN layer 9 on the sapphiresubstrate 8 as a “mold” in the semiconductor light emitting elementaccording to the present embodiment, the same effects are alsoachievable by forming the projecting-type two-dimensional periodicstructure 16 in the surface of the AlGaN layer 9 and thereby forming adepressed-type two dimensional periodic structure 17 in the surface ofthe LED, as shown in FIGS. 13A and 13B. That is, the incident light canbe diffracted provided that the two-dimensional periodic structure hasbeen formed whether the structure in the surface of the LED is of theprojecting type or the depressed type.

Besides the method which forms the projections/depressions in the AlGaNlayer 9, a method as shown in FIG. 14 which forms the projecting ordepressed two-dimensional periodic structure 16 in the principal surfaceof the sapphire substrate 8 also allows the implementation of asemiconductor light emitting element in which the projecting-type ordepressed-type two-dimensional periodic structure is formed in thesurface of the AlGaN layer 9 by using the projecting or depressedtwo-dimensional periodic structure 16 as a mold.

Alternatively, as shown in FIG. 15A, it is also possible to form theprojecting-type two-dimensional periodic structure 16 structure byforming an oxide film such as a SiO₂ film, a nitride film such as a SiNfilm, or a metal film such as a tungsten (W) film on the sapphiresubstrate 8 and then patterning the formed film. As shown in FIG. 15B, alight emitting element having the same characteristics as thesemiconductor light emitting element according to the present embodimentcan also be fabricated by forming the projecting two-dimensionalperiodic structure 16 composed of an oxide film, a nitride film, or ametal film in the principal surface of the AlGaN layer 9.

If a SiC substrate is used in place of the sapphire substrate, thesubstrate can be removed by selective dry etching performed with respectto SiC and GaN. If a Si substrate is used, the substrate can easily beremoved by wet etching. An additional detailed description will be givenlater to the case where the Si substrate is used.

In the case where the depressed two-dimensional periodic structure 17formed in the back surface (upper surface) of the n-type GaN layer 11through the removal of the substrate has a small depth or theinclination of the inner tilted surface of each of the depressions isnot perpendicular, the configuration of the depression can be adjustedby performing processes as shown in FIGS. 16A and 16B after the removalof the substrate.

Specifically, as shown in FIG. 16A, an LED structure and a counterelectrode made of Pt or the like are immersed in an electrolyticsolution such as an aqueous KOH solution and a voltage is appliedbetween the LED and the counter electrode by using the p side of the LEDas a positive electrode. Consequently, anodic oxidation causes theetching of GaN, as shown in FIG. 16B, but only the depression is etcheddue to the localization of an electric field so that the depth of thedepression is increased successfully. The localization of the electricfield to the depression also causes the etching resulting from theanodic oxidation to proceed perpendicularly. As a result, the depressionhaving a perpendicular tilted surface can be formed by the etchingresulting from the anodic oxidation even when the inner tilted surfaceof the depression after the removal of the substrate is not vertical.

FIG. 17 is a view showing the result of theoretically calculating thedependence of the light extraction efficiency on the tilt angle of thedepression. It is assumed herein that the tilt angle is obtained bysubtracting, from 180 degrees, the angle formed between the side surfaceof the depression and the upper surface of the n-type GaN layer 11 in avertical cross section, as shown in the left part of the drawing. Fromthe result shown in FIG. 17, it will be understood that the lightextraction efficiency lowers abruptly when the tilt angle becomes 50degrees or less. That is, when the tilt angle of the two-dimensionalperiodic structure that can be formed after the removal of the substrateis small, the tilt angle can be increased by the anodic oxidationetching described above and the high light extraction efficiency can beimplemented. Thus, in the semiconductor light emitting element accordingto the present embodiment, the tilt angle of the two-dimensionalperiodic structure is adjusted preferably to 50 degrees or more. Evenwhen the two-dimensional periodic structure has a projectingconfiguration, the tilt angle is preferably 50 degrees or more in termsof improving the light extraction efficiency.

—Method for Fabricating Light Emitting Element Using Silicon Substrate—

FIGS. 18A to 18F are perspective views illustrating a second method forfabricating the semiconductor light emitting element shown in FIG. 1according to the first embodiment.

First, as shown in FIG. 18B, the depressed-type two-dimensional periodicstructure 10 is formed in the principal surface of a Si substrate 51through patterning. In the present step, a resist for an etching mask ispatterned by using electron beam exposure, a stepper, and the like.Then, in the present step, the etching of the Si substrate 51 can beperformed by using a dry etching technology such as RIE (Reactive IonEtching) or ion milling, by photoelectrochemical etching performed underthe irradiation of ultraviolet light, or by using a wet etchingtechnology such as etching using a heated acid/alkali solution. In thisexample, the two-dimensional periodic structure 10 is formed in the Sisubstrate 51 by electron beam exposure and RIE. It is assumed that theperiod of the two-dimensional periodic structure 10 is 0.4 μm and thedepth of each of the depressions is 150 nm. Although the configurationof the two-dimensional periodic structure 10 is not particularlylimited, the depression has a cylindrical hole in the example shown inFIG. 18B.

Next, as shown in FIG. 18C, the n-type GaN layer 11 (corresponding tothe n-type GaN layer 5 in FIG. 1), the non-doped InGaN active layer 12(corresponding to the non-doped InGaN active layer 4 in FIG. 1), and thep-type GaN layer 13 (corresponding to the p-type GaN layer 3 in FIG. 1)are formed in this order by MOCVD over the principal surface of the Sisubstrate 51 formed with the two-dimensional periodic structure 10. Itis assumed herein that the respective thicknesses of the n-type GaNlayer 11, the non-doped InGaN active layer 12, and the p-type GaN layer13 are 4 μm, 3 nm, and 200 nm. In the present step, the crystal growthof the n-type GaN layer 11 is performed by setting conditions for thegrowth such that the two-dimensional periodic structure 10 is filledtherewith.

Thereafter, as shown in FIG. 18D, the Pt/Au high-reflection p electrode14 (composed of a multilayer film of Pt and Au) is formed on theprincipal surface of the p-type GaN layer 13 by, e.g., electron beamvapor deposition. Further, the Au plating layer 15 with a thickness ofabout 50 μm is formed by using the Au layer of the high-reflection pelectrode 14 as an underlying electrode.

Subsequently, as shown in FIG. 18E, the Si substrate 51 is removed byusing an etchant containing a HF/HNO₃ mixture. As a result, theprojecting-type two-dimensional periodic structure 6 is formed by selfalignment in the back surface of the n-type GaN layer 11. Since such asemiconductor multilayer film (i.e., a multilayer film composed of then-type GaN layer 11, the non-doped InGaN active layer 12, and the p-typeGaN layer 13) resulting from the removal of the substrate is anextremely thin film with a total thickness of about 4 μm to 5 μm, it hasbeen difficult to form an extremely fine structure such as a photoniccrystal by using a conventional photolithographic technology. However,the method according to the present invention allows easy transfer ofthe extremely fine structure to the surface (back surface) of thesemiconductor multilayer film by merely depositing the semiconductormultilayer film over the depressed two-dimensional periodic structure 10formed preliminarily in the substrate and removing the substratethereafter.

Then, as shown in FIG. 18F, the Ti/Al n electrode 7 having a thicknessof 1 μm is formed on the region of the back surface of the n-type GaNlayer 11 in which the two-dimensional periodic structure 6 is not formedby vapor deposition and lithography or the like, whereby thesemiconductor light emitting element according to the present embodimentis fabricated.

—Effect Achieved by Use of Si Substrate—

Since Si is excellent in heat conduction, it becomes possible to causeuniform heat generation throughout the entire two-dimensional periodicstructure at the time of delamination (e.g., heat of reaction when theSi substrate is removed by wet etching). As a result, a chemicalreaction occurs evenly when the Si substrate 51 is delaminated anddamage to the two-dimensional periodic structure 6 at the time ofdelamination can be prevented.

In general, a semiconductor light emitting element is made of a groupIII-V semiconductor which does not achieve lattice matching with Si andhas a thermal expansion coefficient different from that of Si.Accordingly, extremely small defects occur at the projecting/depressedinterface to allow easy separation of the Si substrate 51 from thesemiconductor multilayer film.

The Si substrate is not flat and has a projecting/depressed structure sothat at least two or more crystal planes exist at theprojecting/depressed interface. Since the wet etching speed of Sidiffers from one crystal plane to another, the etching speed changesperiodically in the two-dimensional periodic structure 10 to cause anextremely slight stir and allow higher-speed etching.

By thus using the Si substrate as a substrate for forming thetwo-dimensional periodic structure, the productivity of thesemiconductor light emitting element can be improved.

Embodiment 2

FIG. 19A is a perspective view showing a semiconductor light emittingelement according to a second embodiment of the present invention. FIG.19B is a plan view when the semiconductor light emitting elementaccording to the second embodiment is viewed from above. Thesemiconductor light emitting element according to the present embodimentis different from the semiconductor light emitting element according tothe first embodiment in that a projecting two-dimensional periodicstructure 18 formed in the upper surface (back surface) of the n-typeGaN layer 5 is configured as polygonal pyramids.

As shown in FIGS. 19A and 19B, the semiconductor light emitting elementaccording to the present embodiment comprises: the p-type GaN layer 3formed by epitaxial growth and having a thickness of 200 nm; thehigh-reflection p electrode 2 formed on the crystal growing surface ofthe p-type GaN layer 3, made of platinum (Pt) and gold (Au) which arestacked in layers, and having a thickness of 1 μm; the Au plating layer1 formed on the lower surface of the high-reflection p electrode 2 andhaving a thickness of 10 μm; the non-doped InGaN active layer 4 formedon the back surface of the p-type GaN layer 3 and having a thickness of3 nm; the n-type GaN layer 5 formed on the back surface of the non-dopedInGaN active layer 4, having a back surface formed with atwo-dimensional periodic structure 18 composed of projections eachconfigured as a hexagonal pyramid, and having a thickness of 4 μm; andthe n electrode 7 formed on the back surface of the n-type GaN layer 5,made of titanium (Ti) and Al which are stacked in layers, and having athickness of 1 μm. In the same manner as in the first embodiment, the PLpeak wavelength of the non-doped InGaN active layer 4 is 405 nm. Theside surface of the projecting structure in the back surface of then-type GaN layer 5 is composed of the {10−1−1} plane of GaN. The periodof the two-dimensional periodic structure 18, i.e., the spacing betweenthe respective centers of the adjacent projections in a two-dimensionalplane is 1.0 μm and the height of each of the projections is 950 nm.

FIG. 20A is a view showing the result of theoretically calculating thetransmittance T of light emitted from the active layer and incident onthe surface of the n-type GaN layer when the projections each configuredas the hexagonal pyramid are formed in the surface (back surface) of then-type GaN layer. FIG. 20B is a view showing the relationship betweenthe period of the two-dimensional periodic structure and the lightextraction efficiency. FIG. 20B assumes 1 when the surface of the n-typeGaN layer is flat and shows, for comparison, the cases where thetwo-dimensional periodic structure has a projecting configuration and aprojecting/depressed configuration (the same configuration as shown inthe first embodiment).

From the result shown in FIG. 20A, it will be understood that, even whenthe period of the two-dimensional periodic structure is as long as 1.0μm, the projecting structure shows a high transmittance at an incidentangle in the vicinity of 45 degrees. Thus, in the semiconductor lightemitting element according to the present embodiment in which the crosssection of the two-dimensional periodic structure is configured as atriangular waveform, the angle between the tilted surface of thetwo-dimensional periodic structure and the incident light approaches 90degrees when the angle of light emitted from the active layer andincident upon the two-dimensional periodic structure in the surface ofthe semiconductor light emitting element is large so that thediffraction efficiency is increased. Since the light at a large incidentangle accounts for a large proportion in the light emitted from theactive layer, high light extraction efficiency is achieved.

From the result shown in FIG. 20B, it will be understood that theprojecting structure shows the same high light emission efficiency asachieved by the projecting/depressed structure and particularly retainsthe effect of increasing the light extraction efficiency even with alonger period. It is to be noted that, with a period of 1.0 μm, thelight extraction efficiency obtained from the surface formed with thetwo-dimensional periodic structure increases to 2.7 times the originallight extraction efficiency.

A description will be given next to a method for fabricating thesemiconductor light emitting element according to the presentembodiment.

FIGS. 21A to 21F are perspective views illustrating the method forfabricating the semiconductor light emitting element according to thepresent embodiment. In the fabrication method according to the presentembodiment, the steps shown in FIGS. 21A to 21E are substantially thesame as those in the fabrication method according to the firstembodiment shown in FIG. 11 so that the description thereof will beomitted. However, it is assumed that the period of the depressed-typetwo-dimensional periodic structure 10 formed in the principal surface ofthe AlGaN layer 9 is 1.0 μm and the depth of the depression is 150 nm.

That is, in the fabrication method according to the present embodiment,the sapphire substrate 8 is removed from the main body of the lightemitting element in the steps prior to and inclusive of that shown inFIG. 21E so that the two-dimensional periodic structure 6 composed of,e.g., cylindrical projections is formed by self alignment on the backsurface of the n-type GaN layer 11.

Next, in the step shown in FIG. 21F, wet etching using an aqueous KOHsolution is performed with respect to the n-type GaN layer 11 formedwith the projecting-type two-dimensional periodic structure 6. It iswell known that, in an etching process using KOH, an etching speed hasdifferent conditions depending on crystal planes. Under such conditions,the projecting-type two-dimensional periodic structure 6 described aboveis changed by etching to the two-dimensional periodic structure 18 of ahexagonal pyramid type as shown in FIG. 20F. In the embodiment shownherein, etching is performed by using an aqueous KOH solution at aconcentration of 0.1 M to form the two-dimensional periodic structure 18composed of hexagonal pyramids each using the crystal plane {10−1−1} asa tilted surface. The fabrication method is characterized in that, sincethe specified crystal plane is used as the tilted surface, thetwo-dimensional periodic structure having a triangular cross section canbe formed easily with high reproducibility.

In the semiconductor light emitting element according to the presentembodiment, the light extraction efficiency is improved to about doublethe result of the theoretical calculation shown in FIG. 20B (about 5.3times the light extraction efficiency achieved in the conventionalembodiment) since, compared with the case where the surface of then-type GaN layer is flat, reflection from the high-reflection pelectrode 2 can also be used. In addition, heat generated in the activelayer can be dissipated through the p-type GaN layer 13 which is as thinas submicron meters and through the Au plating layer 15 having a highthermal conductivity. Accordingly, the effect of improving the lightextraction efficiency achieved by the two-dimensional periodic structureis also retained even when a large current of 100 mA flows in thesemiconductor light emitting element according to the presentembodiment. Although the high-reflection p electrode 2 may also becomposed of a material other than a multilayer film consisting of Pt andAu films, it is preferable in terms of practical use for thehigh-reflection p electrode 2 to have a reflectivity of 80% or more withrespect to the peak wavelength of light generated in the active layer.Specifically, the high-reflection p electrode 2 is preferably a metalfilm containing at least one of an Au film, a Pt film, a Cu film, an Agfilm, and a Rh film.

To retain the excellent heat dissipation property, the Au plating layer15 preferably has a thickness of 10 gm or more. As the material of theAu plating layer 15, Au is most preferable but a metal such as Cu or Agcan also be used because of the relatively high thermal conductivitythereof.

The fabrication method described above can reduce the damage to then-type GaN layer compared with the method which forms thetwo-dimensional periodic structure directly by etching so that thecurrent-voltage characteristic is substantially the same as when thetwo-dimensional periodic structure is not formed.

FIGS. 22A to 22C, FIGS. 23A and 23B, FIGS. 24A and 24B, FIGS. 25A and25B, and FIGS. 26A to 26C are views showing variations of the method forfabricating the semiconductor light emitting device according to thepresent embodiment.

Although the fabrication method according to the present embodiment hasformed the two-dimensional periodic structure having a triangularvertical cross section in the surface of the semiconductor (n-type GaNlayer 11) by using the sapphire substrate 8 or the AlGaN layer 9 formedwith the depressed two-dimensional periodic structure, the depressedtwo-dimensional periodic structure 17 may also be transferred to thesemiconductor surface by using the sapphire substrate 8 or the AlGaNlayer 9 formed with a projecting two-dimensional periodic structure 16as shown in FIGS. 22A to 22C. The method allows a depressed-typetwo-dimensional periodic structure 19 having a triangular vertical crosssection to be formed in the semiconductor surface by using the wetetching process described above. Even in the case where each of thedepressions of the two-dimensional periodic structure 19 has aconfiguration obtained by hollowing a hexagonal pyramid, the same highlight extraction efficiency as achieved by the semiconductor lightemitting element according to the present embodiment is achievable.

If the two-dimensional periodic structure 20 is preliminarily formed inthe surface of the AlGaN layer 9 to have a triangular verticalcross-sectional configuration as shown in FIGS. 23A and 23B and FIGS.24A and 24B, the two-dimensional periodic structures 18 and 19 composedof projections or depressions each having a triangular vertical crosssection can be formed by self alignment in the surface of thesemiconductor when the sapphire substrate 8 and the AlGaN layer 9 areremoved.

If the material of the layer in which the two-dimensional periodicstructure is formed is a hexagonal system semiconductor such as AlGaN,hexagonal pyramids each having a tilted surface composed of a specificcrystal plane can be formed by the same method as described above. Forexample, when a Ti film having an opening corresponding to a portion tobe processed into a depressed configuration is formed as an etching mask21 on the AlGaN surface, as shown in FIG. 25A, and then etching isperformed using an aqueous KOH solution at 100° C., the two-dimensionalperiodic structure 20 is formed in the surface the AlGaN layer 9. Inthis case also, the two-dimensional periodic structure can be formedwith high reproducibility since the tilted surface is composed of aspecific crystal plane such as {10−1−1}.

In the case where a substrate to be formed with the two-dimensionalperiodic structure is made of a tetragonal system semiconductor, such asa Si substrate using the (001) plane for the principal surface, theetching mask 21 made of Ti is formed into a tetragonal latticeconfiguration with a two-dimensional period, as shown in FIG. 26A, andthen etched in an aqueous KOH solution at 70° C. This allows thetwo-dimensional periodic structure 20 configured as square pyramids tobe formed easily in the substrate with high reproducibility, as shown inFIG. 26B, and also allows the two-dimensional periodic structure 18composed of holes configured as square pyramids to be transferred fromthe substrate to the semiconductor surface, as shown in FIG. 26C.

Embodiment 3

FIG. 27 is a perspective view showing a semiconductor light emittingdevice according to a third embodiment of the present invention. Thesemiconductor light emitting device according to the present embodimentis a resin-molded semiconductor light emitting device obtained bymounting the semiconductor light emitting element according to the firstor second embodiment on a mounting substrate 22 and then molding theperiphery of the light emitting element with a hemispherical dome-shapedresin 23. In. FIG. 27, those of the components of the semiconductorlight emitting element which are the same as shown in FIG. 1 aredesignated by the same reference numerals.

By thus molding the light emitting element with the dome-shaped resin,the light extraction efficiency of the semiconductor light emittingelement can be improved, as will be described herein below.

FIG. 28A is a view showing the result of theoretically calculating thetransmittance of light when the semiconductor light emitting element ismolded with the resin. FIG. 28B is a view showing the result oftheoretically calculating the dependence of light extraction efficiencyon the period of a two-dimensional periodic structure in thesemiconductor light emitting device according to the present embodiment.For comparison, FIG. 28A also shows the case where the semiconductorlight emitting element is not molded with the resin and the case wherethe surface of the semiconductor light emitting element is flat. In thecalculation the result of which is shown in the drawings, it is assumedthat the refractive index of the resin is 1.5. In the calculation theresult of which is shown in FIG. 28B, it is assumed thatprojections/depressions each having a perpendicularly tilted surface arearranged to forth a two-dimensional periodic structure and the height ofeach of the projections is 150 nm.

From the result shown in FIG. 28A, it will be understood that, when thetwo-dimensional periodic structure with a 0.4-μm period is provided, thetransmittance of incident light is higher at substantially every anglein the semiconductor light emitting element molded with the resin thanin the semiconductor light emitting element which is not molded with theresin. Since resin molding can also increase the transmittance of lighteven in the semiconductor light emitting element in which thetwo-dimensional periodic structure is not provided, it will beunderstood that the transmittance of light can significantly be improvedby resin molding irrespective of the period of the two-dimensionalperiodic structure.

The reason for the improved transmittance of light is that, even whenthe surface of the semiconductor light emitting element is flat, thetotal reflection critical angle is enlarged by resin molding and Fresnelreflection is reduced thereby even at an incident angle not more thanthe total reflection critical angle. In other words, the transmittanceof light is improved due to a reduction in the difference between therefractive index (which is 2.5) of the inside of the semiconductor lightemitting element and the refractive index (which is 1.5) of the outsidethereof.

From the result shown in FIG. 28B, it will be understood that resinmolding can further enhance the effect of improving the light extractionefficiency achieved by the two-dimensional periodic structure and, atthe maximum, the light extraction efficiency has become 3.8 times thelight extraction efficiency achieved in the conventional embodiment.This is because the molding resin is shaped like a hemispherical dome sothat the light extracted from the semiconductor light emitting elementinto the resin is incident perpendicularly to the interface between theresin and the air due to the two-dimensional periodic structure in thesurface of the semiconductor light emitting element and emitted into theair with approximately 100% efficiency. By thus molding the lightemitting element formed with the two-dimensional periodic structure withthe dome-shaped resin, the light extraction efficiency of thesemiconductor light emitting device according to the present embodimenthas been improved greatly.

In the semiconductor light emitting device according to the presentembodiment, an actually measured value of the light extractionefficiency has improved to about double the result of the theoreticalcalculation shown in FIG. 28B (7.5 times the light extraction efficiencyachieved in the conventional embodiment) since, compared with the casewith the flat surface, reflection from the back surface formed with thetwo-dimensional periodic structure due to the high-reflection pelectrode 2 can also be used. In addition, due to excellent heatdissipation from the p-type semiconductor, which is as thin as submicronmeters, through the Au plating layer with a high thermal conductivity,the effect of enhancing the light extraction efficiency allows theretention of the improved light extraction efficiency achieved by thetwo-dimensional periodic structure even when a large current of 100 mAflows in the electrode.

A description will be given next to a method for fabricating thesemiconductor light emitting device according to the present embodiment.

FIGS. 29A to 29D are perspective views illustrating the method forfabricating the semiconductor light emitting device according to thepresent embodiment.

First, as shown in FIG. 29A, the semiconductor light emitting elementaccording to the first or second embodiment is fabricated by using themethod for fabricating the semiconductor light emitting elementaccording to the first embodiment shown in FIGS. 11 or the method forfabricating the semiconductor light emitting element according to thesecond embodiment shown in FIGS. 21.

Next, as shown in FIG. 29B, the semiconductor light emitting element ismounted on the mounting substrate 22. Thereafter, the resin 23 isapplied dropwise to the semiconductor light emitting element.

Then, as shown in FIG. 29C, the resin 23 is pressed by using a mold die24 provided with a hemispherical cavity during the period after thesemiconductor light emitting element is covered with the resin 23 andbefore the resin 23 is set. As a result, the resin 23 is molded into ahemispherical dome-shaped configuration, as shown in FIG. 29D.Thereafter, the resin is set under ultraviolet light. By the methoddescribed above, the semiconductor light emitting device according tothe present embodiment is fabricated.

Although it has been difficult to form the resin into a hemisphericalconfiguration with high reproducibility by using a conventionaltechnology which simply applies and molds a resin, the fabricationmethod according to the present embodiment enables stable molding of aresin into the same configuration.

It is to be noted that a method which molds a resin into a hemisphericalconfiguration using a mold die as described above is also applicable toa semiconductor light emitting element according to an embodiment otherthan the first and second embodiments of the present invention.

Embodiment 4

FIG. 30 is a cross-sectional view showing a part of a semiconductorlight emitting element according to a fourth embodiment of the presentinvention. The semiconductor light emitting element according to thepresent embodiment is different from the first and second semiconductorlight emitting elements in that the sapphire substrate 8 and the AlGaNlayer 9 remain mounted on the amounting substrate 22 without beingremoved and that the high-reflection p electrode 2 and the n electrode 7are formed on the same side when viewed from the n-type GaN layer 5.

Specifically, the semiconductor light emitting element according to thepresent embodiment shown in FIG. 30 comprises: the p-type GaN layer 3formed by epitaxial growth and having a thickness of 200 nm; thehigh-reflection p electrode 2 formed on the crystal growing surface(principal surface) of the p-type GaN layer 3, made of platinum (Pt) andgold (Au) which are stacked in layers, and having a thickness of 1 μm;the non-doped InGaN active layer 4 formed on the back surface of thep-type GaN layer 3 and having a thickness of 3 nm; an n-type GaN layer 5formed on the back surface of the non-doped InGaN active layer 4 andhaving a thickness of 4 μm; the n electrode 7 formed under the n-typeGaN layer 5, made of Ti and Al which are stacked in layers, and having athickness of 1 μm; the AlGaN layer 9 provided on the back surface ofthen-type GaN layer 5 and having a principal surface (surface facing then-type GaN layer 5) formed with the projecting-type two-dimensionalperiodic structure 16; and the sapphire substrate 8 disposed on the backsurface of the AlGaN layer 9. In the example shown in FIG. 30, thesemiconductor light emitting element has been mounted on the mountingsubstrate 22 and the high-reflection p electrode 2 and the n electrode 7are particularly connected to the mounting substrate 22 via bumps 25made of Au. The period of the two-dimensional periodic structure 16,i.e., the spacing between the respective centers of the adjacentprojections in a two-dimensional plane is 0.4 μm and the height of eachof the projections/depressions is 150 nm. In the example shown in FIG.30, the n-type GaN layer 5 is formed not to be buried in thetwo-dimensional periodic structure 16. If the n-type GaN layer 5 isformed to be buried in the two-dimensional periodic structure 16, thelight extraction efficiency lowers so that it is formed preferably notto be buried therein.

By thus mounting the semiconductor light emitting element with thesubstrate made of sapphire or the like being left, the light emittedfrom the non-doped InGaN active layer 4 propagates in the light emittingelement without undergoing a loss caused by total reflection or Fresnelreflection since there is substantially no refractive index differencetill the AlGaN layer 9 is reached. In the conventional structure,however, the refractive index difference between the sapphire substrate(with a refractive index of 1.6) and the AlGaN layer (with a refractiveindex of 2.5) is large so that light at a large incident angle istotally reflected at the interface between the sapphire substrate andthe AlGaN layer, returns to the inside of the semiconductor multilayerfilm, and is therefore unextractable to the outside of the LED. Bycontrast, if a two-dimensional periodic structure is formed in the backsurface of an AlGaN layer as in the semiconductor light emitting elementaccording to the present embodiment, diffraction by the two-dimensionalperiodic structure changes the direction of propagation. As a result, ifthe back surface of the AlGaN layer is flat, the light at a largeincident angle that has been totally reflected at the interface betweenthe sapphire substrate and the AlGaN layer and occupying a largeproportion in the solid angle is allowed to be incident on the sapphiresubstrate without being totally reflected. Since the sapphire substrateis transparent and the refractive index difference between itself andthe air is small, the majority of the light incident upon the sapphiresubstrate is emitted into the air.

In the case where resin molding is performed, the refractive indexdifference between the sapphire substrate and a resin (with a refractiveindex of about 1.5) is further reduced and, if the resin is configuredas a hemispherical dome, the light extraction efficiency can further beimproved.

A description will be given next to a method for fabricating thesemiconductor light emitting element according to the presentembodiment. FIGS. 31A to 31E are cross-sectional views illustrating themethod for fabricating the semiconductor light emitting elementaccording to the present embodiment.

First, as shown in FIG. 31A, the AlGaN layer 9 is formed through crystalgrowth by, e.g., MOCVD on the sapphire substrate 8. The thickness of theAlGaN layer 9 is assumed herein to be 1μm for a reduction in crystaldefects. The composition of Al in the AlGaN layer 9 is assumed herein tobe 100%, though the AlGaN layer 9 may have any Al composition providedthat it is transparent relative to the wavelength of light used in alaser lift-off process performed later. Subsequently, the AlGaN layer ispattered into the depressed- or projecting-type two-dimensional periodicstructure 16 by exposure using a stepper and RIE. It is assumed hereinthat the period of the two-dimensional periodic structure 16 is 0.4 μmand the depth of each of the depressions (or the height of each of theprojections) is 150 nm.

Next, as shown in FIG. 31B, the n-type GaN layer 5, the non-doped InGaNactive layer 4, the p-type GaN layer 3 are formed successively by MOCVDon the principal surface of the AlGaN layer 9 formed with thetwo-dimensional periodic structure 16. The crystal growth of the n-typeGaN layer 5 is performed by setting conditions for the growth such thatthe two-dimensional periodic structure is not filled therewith.

Thereafter, etching is performed with respect to a region to partiallyexpose the principal surface of the n-type GaN layer 5, as shown in FIG.31C. Then, the Pt/Au high-reflection p electrode 2 is formed on theprincipal surface of the p-type GaN layer 3, while the Ti/Al n electrode7 is formed on the exposed portion of the principal surface of then-type GaN layer 5, each by electron beam vapor deposition.

Next, as shown in FIG. 31D, the semiconductor light emitting element ismounted on the mounting substrate 22 formed with the bumps 25 for the nelectrode and for the high-reflection p electrode, whereby thesemiconductor light emitting element according to the fourth embodimentshown in FIG. 31E is obtained.

In the semiconductor light emitting element thus fabricated, the lightextraction efficiency is improved to about double the result of thetheoretical calculation shown in FIG. 28B (quadruple the lightextraction efficiency achieved in the conventional light emittingelement) since, compared with the case where the principal surface ofthe AIGaN layer 9 is flat, light reflected from the lower surface of theLED due to the high-reflection p electrode 2 can also be used.

In addition, the heat generated in the active layer can be dissipatedfrom the p-type GaN layer 3 as thin as submicron meters through thebumps 25 each having a high thermal conductivity so that an excessivetemperature increase is prevented in the semiconductor light emittingelement according to the present embodiment. Moreover, the increase rateof the light output from the semiconductor light emitting element to aninput current thereto when the input current is small remains unchangedeven when a large current of 100 mA flows in the electrode.

Although the present invention has formed the two-dimensional periodicstructure in the principal surface of the AlGaN layer 9 on the sapphiresubstrate 8, the two-dimensional periodic structure may also be formedin the principal surface of the sapphire substrate 8. The substrate mayalso be composed of any material other than sapphire provided that it istransparent to the light emitted from the active layer.

When the back surface (principal surface) of the sapphire substrate 8 isrough, the light extraction efficiency is improved to 4.5 times thelight extraction efficiency achieved in the conventional structure. Thisis because the presence of the rough back surface reduces a lossresulting from total reflection at the interface between the sapphiresubstrate and the air. When the back surface of the sapphire substrate 8is rough, the autocorrelation distance T in the back surface of thesapphire substrate 8 preferably satisfies 0.5λ/N<T<20λ/N and a heightdistribution D in a perpendicular direction preferably satisfies0.5λ/N<D<20λ/N in terms of sufficiently reducing the loss.

When the semiconductor light emitting element is molded with ahemispherical resin, the light extraction efficiency is improved to 6times the light extraction efficiency achieved in the conventionalstructure. This is because the small refractive index difference betweenthe resin and the sapphire reduces the loss resulting from totalreflection at the interface between the sapphire substrate and theresin.

In the semiconductor light emitting element according to the presentembodiment, a substrate made of one selected from the group consistingof GaAs, InP, Si, SiC, and AlN may also be used instead of the sapphiresubstrate.

Although the example shown in FIG. 30 has formed the two-dimensionalperiodic structure 16 in the principal surface of the AlGaN layer 9, ifa Si substrate is used in place of the sapphire substrate, thetwo-dimensional periodic structure may also be formed appropriately inthe principal surface of the Si substrate. During crystal growth, the Sisubstrate is exposed to a high temperature and residual oxygen in acrystal growth furnace forms an extremely thin SiO₂ film on the surfaceof the Si substrate (the surface of the two-dimensional periodicstructure). In contrast to the refractive index of Si which is about3.3, the refractive index of SiO₂ is about 1.4. Since the refractiveindex of a light emitting semiconductor layer is typically 2.4 to 3.3,the SiO₂ film increases a change in the refractive index of thetwo-dimensional periodic structure. Because the diffraction efficiencyis higher as the refractive index change is larger, the light emissionefficiency can further be increased.

Embodiment 5

FIGS. 32A to 32E are perspective views illustrating a method forfabricating a semiconductor light emitting element according to a fifthembodiment of the present invention. The fabrication method according tothe present embodiment is a method for forming a two-dimensionalperiodic structure in the principal surface of a substrate by using anano-printing method.

First, as shown in FIGS. 32A and 32B, a Si substrate or a SiC substrateformed with a two-dimensional periodic structure 28 composed ofprojections each at a height of 400 nm and having a period of 0.4 μm isprepared. Then, the substrate is pressed as a mold 26 against theprincipal surface of the sapphire substrate 8 coated with a resist 27having a film thickness of 600 nm.

When the mold 26 is removed from the sapphire substrate 8 thereafter, adepressed two-dimensional periodic structure (the depth of each of holesis 400 nm and the period is 0.4 μm) is transferred to the resist 27, asshown in FIG. 32C. Next, as shown in FIG. 32D, the resist remaining atthe bottom of each of the holes in the resist 27 is removed by O₂ dryetching.

Next, as shown in FIG. 32E, dry etching is performed by using the resist27 as an etching mask and then the resist 27 is removed, whereby thetwo-dimensional periodic structure composed of depressions each at adepth of 150 nm and having a period of 0.4 μm is formed in the principalsurface of the sapphire substrate 8.

By thus using the nano-printing method, an extremely fine structure on asubmicron order can be formed through patterning without using ahigh-cost manufacturing apparatus such as a stepper or an EB exposuresystem. In addition, the fabrication method according to the presentembodiment can be implemented by merely pressing the mold so thathigh-speed patterning is performed. If the substrate produced by theforegoing process is used as a mold, the semiconductor light emittingelements according to the first to fourth embodiments can be fabricatedat a low cost.

Embodiment 6

FIGS. 33A to 33G are perspective views illustrating a method forfabricating a semiconductor light emitting element according to a sixthembodiment of the present invention. The method for fabricating thesemiconductor light emitting element according to the present embodimentis a method for forming a two-dimensional periodic structure in theprincipal surface of a semiconductor thin film by using a soft moldmethod.

First, as shown in FIG. 33A, a soft mold used for micro-processing isproduced. In the present step, a two-dimensional periodic structure 31composed of holes (depressions) each at a depth of 400 nm and having aperiod of 0.4 μm is formed in a resin 30 such as polysilane coated on asubstrate 29 such as a Si substrate or a SiC substrate by using aphotolithographic, EB lithographic, or nano-printing process. Thesubstrate with the resin thus produced is used as the soft mold for amicro-processing step performed later.

Next, as shown in FIG. 33B, a thin-film semiconductor multilayer filmhaving the Au plating layer 15 is formed by the method described in thefirst embodiment. In the method according to the present embodiment,however, the surface of the substrate used for the formation of thesemiconductor multilayer film is flat so that the surface of thesemiconductor multilayer film is also flat.

Next, as shown in FIG. 33C, the resist 27 is coated on the principalsurface of the semiconductor multilayer film. However, evaporation of asolvent in the resist 27 by baking is not performed herein. The softmold described above is placed on the resist 27. In this case, the softmold is placed to exert minimum pressure on the semiconductor multilayerfilm having a thickness of several micro meters and thereby prevent thedestruction thereof.

As a result, capillarity occurs as a result of the absorption of thesolvent in the resist 27 by the resin 30 so that the resist 27penetrates in the resin of the soft mold in such a manner as to fill inthe holes of the two-dimensional periodic structure, as shown in FIG.33D.

Thereafter, when the mold is removed from the semiconductor multilayerfilm, a projecting two-dimensional periodic structure (the height ofeach of the projections is 400 nm and the period is 0.4 μm) istransferred to the resist 27, as shown in FIG. 33E.

Next, as shown in FIG. 33F, the resist 27 remaining at the bottom ofeach of the holes in the resist is removed by O₂ dry etching.

Thereafter, as shown in FIG. 33G, dry etching is performed with respectto the principal surface of the semiconductor multilayer film by usingthe resist 27 as an etching mask and then the resist is removed, wherebythe two-dimensional periodic structure (the height of each ofprojections is 150 nm and the period is 0.4 μm) is formed in theprincipal surface of the semiconductor multilayer film.

By thus using the soft mold method, micro-processing on a submicronorder can be performed even with respect to a thin film which isextremely difficult to process, such as a semiconductor multilayer filmhaving a thickness on the order of submicron meters. In this case, sincea flat substrate can be used satisfactorily for the crystal growth ofthe semiconductor multilayer film, the crystal growth becomes easierthan in the case of crystal growth on a substrate formed withprojections/depressions.

Although the embodiments described heretofore have particularlydisclosed the nitride-based compound semiconductor which is difficult toprocess or the case where the period of the projections/depressionsbecomes smaller in response to the oscillation wavelength of a shorterwavelength of blue or purple light so that micro-processing thereofbecomes difficult, the design of the present invention is alsoapplicable to a semiconductor light emitting element which emitsinfrared light or red light using AlGaAs (with a refractive index of3.6) or AlGaInP (with a refractive index of 3.5) as a semiconductor.

Embodiment 7

FIG. 34 is a perspective view showing a semiconductor light emittingelement according to a seventh embodiment of the present invention. Asshown in the drawing, the semiconductor light emitting element accordingto the present embodiment comprises: a p-type AlGaN layer (firstsemiconductor layer) 43 formed by epitaxial growth and having athickness of 200 nm; a high-reflection p electrode (first electrode) 42formed on the crystal growing surface (principal surface) of the p-typeAlGaN layer 43, made of Al, and having a thickness of 0.5 μm; an Auplating layer 41 formed on the lower surface of the high-reflection pelectrode 42 and having a thickness of 10 μm; a non-doped AlInGaN activelayer 44 formed on the back surface of the p-type AlGaN layer 43 andhaving a thickness of 3 nm; an n-type AlGaN layer (second semiconductorlayer) 45 formed on the back surface of the non-doped AlInGaN activelayer 44, having a back surface formed with a projecting-typetwo-dimensional periodic structure 46, and having a thickness of 4 μm;and an n electrode (second electrode) 47 formed on the back surface ofthe n-type AlGaN layer 45, made of titanium (Ti) and Al which arestacked in layers, and having a thickness of 1 μm. The lower surfaceused herein indicates a surface of a certain layer located in the lowerpart of FIG. 34.

The semiconductor light emitting element according to the presentembodiment functions as an ultraviolet LED from which light is extractedthrough the back surface of the n-type AlGaN layer 45 and the PL peakwavelength of the non-doped AlInGaN active layer 44 is 350 nm.

The period of the two-dimensional periodic structure 46 formed in theback surface of the n-type AlGaN layer 45, i.e., the spacing between therespective centers of adjacent projections in a two-dimensional plane is0.3 μm and the height of each of the projections is 130 nm.

The nitride-based compound semiconductor composing the semiconductorlight emitting element according to the present embodiment can also beformed by MOCVD or MBE, similarly to the nitride-based compoundsemiconductor composing the semiconductor light emitting elementaccording to the first embodiment.

The semiconductor light emitting element according to the presentembodiment also achieves the same high light extraction efficiency andexcellent heat dissipation property as achieved by the semiconductorlight emitting element according to the first embodiment. Since thehigh-reflection p electrode 42 is made of Al, the light generated in thenon-doped AlInGaN active layer 44 can be reflected with a particularlyhigh efficiency.

Thus, the structure of a semiconductor light emitting element accordingto the present invention is also applied effectively to a light emittingelement which emits light at an emission wavelength having a peak in theultraviolet region.

In the semiconductor light emitting element functioning as theultraviolet LED according to the present embodiment, the high-reflectionp electrode (first electrode) 42 may also be made of Al.

Thus, the semiconductor light emitting element according to the presentinvention is useful as a light source having high emission efficiency.

1-14. (canceled)
 15. A semiconductor light emitting element for emittinglight, comprising: a metal layer, multiple group-III nitridesemiconductor layers located on the metal layer and having an activelayer, a first principle surface with projections and a second principlesurface facing the metal layer and located under the first principlesurface; wherein the metal layer has approximately the same area as thesecond principle surface, and the distance between the active layer andthe first principle surface is larger than the distance between theactive layer and the second principle surface.
 16. The semiconductorlight emitting element of claim 15, wherein: a first electrode being incontact with the first principle surface; and a second electrode beingin contact with the second principle surface.
 17. The semiconductorlight emitting element of claim 15, wherein: the distance between theactive layer and the bottom surface of the projections is larger thanthe distance between the active layer and the second principle surface.18. The semiconductor light emitting element of claim 15, wherein: 0.5λ/N≦L≦20 λ/N is satisfied where L is a distance between the nearest twoprojections, λ is a wavelength of emitted light from the active layer,and N is a refractive index of the group-III nitride semiconductorcomprising the projections.
 19. The semiconductor light emitting elementof claim 15, wherein: 0.5 λ/N≦L≦4 λ/N is satisfied where L is a distancebetween the nearest two projections, λ is a wavelength of emitted lightfrom the active layer, and N is a refractive index of the group-IIInitride semiconductor comprising the projections.